OPTIMIZATION OF SnO2 THIN FILMS FOR LOW TEMPERATURE NO2 SENSORS APPLICATIONS
Résumé
In this work, a high-performance n-type semiconductor gas sensor based on undoped-SnO2 thin films deposited by conventional radiofrequency (RF)magnetron sputtering process was successfully fabricated. The structure, morphology, and chemical composition of the sensing material were investigated using X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) respectively. The end results show that the thin film has a polycrystalline structure with the presence of oxygen vacancies. The resistive sensor architecture has been simulated using TCAD SILVACO software's in order to optimize the geometry for a sensor response optimization.
In this study, undoped-SnO2 resistive gas sensor exhibits compelling sensing performance for detecting 3 ppm of NO2 mixed with dry air at low operating temperature, around 100°C. 3 ppm represents the maximum level of NO2 concentration beyond which short-term exposure presents a risk to human health or environmental degradation. Lower concentrations were also investigated in our study and the lowest NO2 concentration evaluated is about 0.25 ppm.
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